FMMT491 High Voltage NPN Power Transistor Low Equivalent On Resistance

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FMMT491 High Voltage NPN Power Transistor Low Equivalent On Resistance

Name: FMMT491 High Voltage NPN Power Transistor Low Equivalent On Resistance
Brand: Hua Xuan Yang
Price: 1 USD

FMMT491 High Voltage NPN Power Transistor Low Equivalent On Resistance Manufactures

Place of Origin : ShenZhen China

Brand Name : Hua Xuan Yang

Certification : RoHS、SGS

MOQ : 1000-2000 PCS

Price : Negotiated

Packaging Details : Boxed

Delivery Time : 1 - 2 Weeks

Payment Terms : L/C T/T Western Union

Supply Ability : 18,000,000PCS / Per Day

Model Number : FMMT491

Type : Silicon Power Transistor

FEATURE : Low equivalent on-resistance

Collector-Emitter Voltage : 60v

Storage Temperature : -55～+150℃

Collector Power Dissipation : 250mW

Peak Pulse Current : 2A

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SOT-23 Plastic-Encapsulate Transistors FMMT491 TRANSISTOR (NPN)

FEATURE

Low equivalent on-resistance

Marking :491

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage	80	V
VCEO	Collector-Emitter Voltage	60	V
VEBO	Emitter-Base Voltage	5	V
IC	Collector Current	1	A
ICM	Peak Pulse Current	2	A
PC	Collector Power Dissipation	250	mW
RΘJA	Thermal Resistance From Junction To Ambient	500	℃/W
Tj	Junction Temperature	150	℃
Tstg	Storage Temperature	-55～+150	℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	I_C=100μA,I_E=0	80			V
Collector-emitter breakdown voltage	V(BR)CEO1	I_C=10mA,I_B=0	60			V
Emitter-base breakdown voltage	V(BR)EBO	I_E=100μA,I_C=0	5			V
Collector cut-off current	ICBO	V_CB=60V,I_E=0			0.1	μA
Emitter cut-off current	IEBO	V_EB=4V,I_C=0			0.1	μA
DC current gain	hFE(1)	V_CE=5V,I_C=1mA	100
	hFE(2) 1	V_CE=5V,I_C=500mA	100		300
	hFE(3) 1	V_CE=5V,I_C=1A	80
	hFE(4) 1	V_CE=5V,I_C=2A	30
Collector-emitter saturation voltage	VCE(sat)1 1	I_C=500mA,I_B=50mA			0.25	V
	VCE(sat)2 1	I_C=1A,I_B=100mA			0.5	V
Base-emitter saturation voltage	VBE(sat) 1	I_C=1A,I_B=100mA			1.1	V
Base-emitter voltage	1 VBE	V_CE=5V,I_C=1A			1	V
Transition frequency	fT	V_CE=10V,I_C=50mA,,f=100MHz	150			MHz
Collector output capacitance	Cob	V_CB=10V,f=1MHz			10	pF

Measured under pulsed conditions, Pulse width=300μs, Duty cycle≤2%.

Typical Characterisitics

FMMT491 High Voltage NPN Power Transistor Low Equivalent On Resistance

Package Outline Dimensions

Symbol	Dimensions In Millimeters		Dimensions In Inches
	Min	Max	Min	Max
A	0.900	1.150	0.035	0.045
A1	0.000	0.100	0.000	0.004
A2	0.900	1.050	0.035	0.041
b	0.300	0.500	0.012	0.020
c	0.080	0.150	0.003	0.006
D	2.800	3.000	0.110	0.118
E	1.200	1.400	0.047	0.055
E1	2.250	2.550	0.089	0.100
e	0.950 TYP		0.037 TYP
e1	1.800	2.000	0.071	0.079
L	0.550 REF		0.022 REF
L1	0.300	0.500	0.012	0.020
θ	0°	8°	0°	8°

FMMT491 High Voltage NPN Power Transistor Low Equivalent On Resistance

Product Tags:

high frequency transistor

power mosfet transistors

FMMT491 High Voltage NPN Power Transistor Low Equivalent On Resistance Images

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